Sfoglia per Autore
Pattern generation by using multi-step room-temperature nanoimprint lithography
2007-01-01 Harrer, S.; Yang, J. K. W.; Salvatore, G. A.; Berggren, K. K.; Ilievski, F.; Ross, C. A.
Low voltage ferroelectric FET with sub-l00nm copolymer P(VDF-TrFE) gate dielectric for non-volatile IT memory
2008-01-01 Salvatore, G. A.; Bouvet, D.; Stolitchnov, I.; Setter, N.; Ionescu, A. M.
1T memory cell based on PVDF-TrFE field effect transistor
2008-01-01 Salvatore, G. A.; Bouvet, D.; Ionescu, M. A.; Riester, S.; Stolichnov, I.; Gysel, R.; Setter, N.
Demonstration of subthrehold swing smaller than 60mV/decade in Fe-FET with P(VDF-TrFE)/SiO2 gate stack
2008-01-01 Salvatore, G. A.; Bouvet, D.; Ionescu, A. M.
A study of polarization effects in metal-ferroelectric-oxide-semiconductor capacitors
2009-01-01 Rusu, A.; Salvatore, G.; Ionescu, A. M.
An experimental study of temperature influence on electrical characteristics of ferroelectric P(VDF-TrFE) FETs on SOI
2009-01-01 Salvatore, G. A.; Lattanzio, L.; Bouvet, D.; Ionescu, A. M.
Materials and devices for nanoelectronic systems beyond ultimately scaled CMOS
2009-01-01 Bouvet, D.; Forro, L.; Ionescu, A. M.; Leblebici, Y.; Magrez, A.; Moselund, K. E.; Salvatore, G. A.; Setter, N.; Stolitchnov, I.
Retention in nonvolatile silicon transistors with an organic ferroelectric gate
2009-01-01 Gysel, R.; Stolichnov, I.; Tagantsev, A. K.; Riester, S. W. E.; Setter, N.; Salvatore, G. A.; Bouvet, D.; Ionescu, A. M.
Metal-ferroelectric-metal-oxide-semiconductor field effect transistor with sub-60mV/decade subthreshold swing and internal voltage amplification
2010-01-01 Rusu, A.; Salvatore, G. A.; Jimenez, D.; Ionescu, A. M.
Ferroelectric transistors with improved characteristics at high temperature
2010-01-01 Salvatore, G. A.; Lattanzio, L.; Bouvet, D.; Stolichnov, I.; Setter, N.; Ionescu, A. M.
Ultra low power: Emerging devices and their benefits for integrated circuits
2011-01-01 Ionescu, A. M.; De Michielis, L.; Dagtekin, N.; Salvatore, G. A.; Cao, J.; Rusu, A.; Bartsch, S.
Flexible a-IGZO TFT amplifier fabricated on a free standing polyimide foil operating at 1.2 MHz while bent to a radius of 5 mm
2012-01-01 Munzenrieder, N.; Petti, L.; Zysset, C.; Salvatore, G. A.; Kinkeldei, T.; Perumal, C.; Carta, C.; Ellinger, F.; Troster, G.
Experimental confirmation of temperature dependent negative capacitance in ferroelectric field effect transistor
2012-01-01 Salvatore, Giovanni A.; Rusu, Alexandru; Ionescu, Adrian M.
Room temperature fabricated flexible NiO/IGZO pn diode under mechanical strain
2013-01-01 Munzenrieder, N.; Zysset, C.; Petti, L.; Kinkeldei, T.; Salvatore, G. A.; Troster, G.
Combining electronics on flexible plastic strips with textiles
2013-01-01 Zysset, C.; Kinkeldei, T.; Munzenrieder, N.; Petti, L.; Salvatore, G.; Troster, G.
Flexible Self-Aligned Amorphous InGaZnO Thin-Film Transistors With Submicrometer Channel Length and a Transit Frequency of 135 MHz
2013-01-01 Munzenrieder, N; Petti, L; Zysset, C; Kinkeldei, T; Salvatore, Ga; Troster, G
Investigation of gate material ductility enables flexible a-IGZO TFTs bendable to a radius of 1.7 mm
2013-01-01 Munzenrieder, N.; Petti, L.; Zysset, C.; Gork, D.; Buthe, L.; Salvatore, G. A.; Troster, G.
Contact resistance and overlapping capacitance in flexible sub-micron long oxide thin-film transistors for above 100MHz operation
2014-01-01 M??nzenrieder, Niko; Salvatore, Giovanni A.; Petti, Luisa; Zysset, Christoph; B??the, Lars; Vogt, Christian; Cantarella, Giuseppe; Tr??ster, Gerhard
Small Slope Switches
2014-01-01 Ionescu, A. M.; Balestra, F.; Boucart, K.; Salvatore, G.; Rusu, A.
22.5 dB Open-Loop Gain, 31 kHz GBW Pseudo-CMOS Based Operational Amplifier with a-IGZO TFTs on a Flexible Film
2014-01-01 Ishida, Koich; Shabanpour, Reza; K Boroujeni, Bahman; Meister, Tilo; Carta, Corrado; Ellinger, Frank; Petti, Luisa; S Münzenrieder, Niko; Salvatore, Giovanni A.; Tröster, Gerhard
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